NVATS68301PZT4G دیتاشیت

NVATS68301PZT4G

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نام دیتاشیت NVATS68301PZT4G
حجم فایل 70.922 کیلوبایت
نوع فایل pdf
تعداد صفحات 6

مشاهده دیتاشیت NVATS68301PZT4G

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NVATS68301PZ 6 pages

مشخصات فنی

  • RoHS: true
  • Type: P Channel
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: onsemi NVATS68301PZT4G
  • Operating Temperature: -55°C~+175°C@(Tj)
  • Power Dissipation (Pd): 84W
  • Total Gate Charge (Qg@Vgs): 55nC@10V
  • Drain Source Voltage (Vdss): 100V
  • Input Capacitance (Ciss@Vds): 2.85nF@20V
  • Continuous Drain Current (Id): 31A
  • Gate Threshold Voltage (Vgs(th)@Id): 3.5V@1mA
  • Reverse Transfer Capacitance (Crss@Vds): 125pF@20V
  • Drain Source On Resistance (RDS(on)@Vgs,Id): 57mΩ@10V,14A
  • Package: TO-252
  • Manufacturer: onsemi
  • Series: Automotive, AEC-Q101
  • Packaging: Tape & Reel (TR)
  • Part Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 75mOhm @ 14A, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 2850pF @ 20V
  • FET Feature: -
  • Power Dissipation (Max): 84W (Tc)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DPAK
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Base Part Number: NVATS6
  • detail: P-Channel 100V 31A (Ta) 84W (Tc) Surface Mount DPAK

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